新型铁电薄膜在MFIS器件中的应用

doi:10.3969/j.issn.1000-1565.2023.04.004

河北大学学报(自然科学版) ›› 2023, Vol. 43 ›› Issue (4): 364-368.DOI: 10.3969/j.issn.1000-1565.2023.04.004

新型铁电薄膜在MFIS器件中的应用

王树雨,芦春光,袁秋婷,仇加俊,付跃举,蔡淑珍,傅广生

收稿日期:2022-05-27 出版日期:2023-07-25 发布日期:2023-08-03
通讯作者: 付跃举(1980—)
作者简介:王树雨(1995—),男,河南新乡人,河北大学在读硕士研究生,主要从事新型铁电薄膜的制备与研究.
E-mail:1970119348@qq.com
基金资助:
国家自然科学基金-应急管理项目(11547185);河北省自然科学基金资助项目(E2015201233)

Application of novel ferroelectric thin films in MFIS devices

WANG Shuyu,LU Chunguang, YUAN Qiuting,QIU Jiajun,FU Yueju,CAI Shuzhen,FU Guangsheng

College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received:2022-05-27 Online:2023-07-25 Published:2023-08-03

摘要/Abstract

摘要： 利用新型铁电材料Na_0.5Y_0.5TiO₃(NYTO)薄膜高介电的特点,将其作为MFIS(metal-ferroelectric-insulator-semiconductor,MFIS)电容器的绝缘层,制备出Pt/Pb(Zr_0.2Ti_0.8)O₃/ NYTO/Si结构电容器,并对其进行XRD、SEM、C-V特性测试及I-V特性测试分析.分别对C-V存储窗口(记忆窗口,memory window)与应用电压以及绝缘层膜厚的关系进行了研究,结果表明记忆窗口数值比较理想.绝缘层厚度为40 nm、电容器的应用电压为32 V时,记忆窗口可达13 V.对制备的MFIS电容器I-V特性进行了研究,结果表明器件具备较低的漏电流密度,为1.08×10^-6 A/cm²,且其电流传导机制符合空间电荷限制电流导电机制.

关键词: 新型铁电薄膜, MFIS电容器, 记忆窗口, C-V特性

Abstract: Ferroelectric Na_0.5Y_0.5TiO₃(NYTO)film is used as the insulating layer of MFIS(Metal-Ferroelectric-Insulate-Semiconductor)capacitors by its high dielectric properties. The Pt/ Pb(Zr_0.2Ti_0.8)O₃/ NYTO/ Si structure capacitors were prepared, and their XRD, SEM, C-V, and I-V characterristics were tested and analyzed. The dependence of C-V storage window on application voltage and insulation layer thickness were studied separately. The results show that the device has a large memory window when the thickness of the insulation layer is 40 nm. The memory window can reach 13 V with 32 V applied voltage. The MFIS capacitor has low leakage current density of 1.08×10^-6 A/cm². The conduction mechanism of leakage current conforms to space charge limited current conduction mechanism.

Key words: novel ferroelectric film, MFIS capacitors, memory window, C-V characteristics

中图分类号:

O469

王树雨,芦春光,袁秋婷,仇加俊,付跃举,蔡淑珍,傅广生. 新型铁电薄膜在MFIS器件中的应用[J]. 河北大学学报(自然科学版), 2023, 43(4): 364-368.

WANG Shuyu,LU Chunguang, YUAN Qiuting,QIU Jiajun,FU Yueju,CAI Shuzhen,FU Guangsheng. Application of novel ferroelectric thin films in MFIS devices[J]. Journal of Hebei University(Natural Science Edition), 2023, 43(4): 364-368.

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新型铁电薄膜在MFIS器件中的应用

Application of novel ferroelectric thin films in MFIS devices

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