Ga3+对Mg14Ge5O24:Cr近红外发光材料的影响

doi:10.3969/j.issn.1000-1565.2023.05.003

河北大学学报(自然科学版) ›› 2023, Vol. 43 ›› Issue (5): 463-469.DOI: 10.3969/j.issn.1000-1565.2023.05.003

Ga³⁺对Mg₁₄Ge₅O₂₄:Cr近红外发光材料的影响

徐艳梅¹,秦晓东¹,梁绍龙¹,王嘉瑞¹,王雪骄²,王志军²

收稿日期:2023-01-09 出版日期:2023-09-25 发布日期:2023-10-25
通讯作者: 王志军(1979—)
作者简介:徐艳梅(1979—),女,河北廊坊人,华北电力大学副教授,博士,主要从事发光材料及应用方向研究.
E-mail:xuyanmei@ncepu.edu.cn
基金资助:
国家自然科学基金资助项目(51902080;2018MS133);华北电力大学中央高校基金资助项目(2018MS133)

Effect of Ga³⁺ on the luminescence property of Mg₁₄Ge₅O₂₄:Cr near infrared material

XU Yanmei¹,QIN Xiaodong¹,LIANG Shaolong¹,WANG Jiarui¹,WANG Xuejiao²,WANG Zhijun²

1.Department of Mathematics and Physics, North China Electric Power Unversity, Baoding 071003, China; 2.College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received:2023-01-09 Online:2023-09-25 Published:2023-10-25

摘要/Abstract

摘要： 利用高温固相法合成了Mg₁₄Ge₅O₂₄:Cr近红外荧光粉,实现了Cr³⁺和Cr⁴⁺价态共存发光.利用XRD和GASA精修软件分析了样品的晶相.该材料存在2个发光中心,一个来自占据八面体Ge⁴⁺位置的Cr³⁺,发射带位于近红外一区,半峰宽可达256 nm;另一个源于占据四面体Ge⁴⁺位置的Cr⁴⁺,发射带位于近红外二区,半峰宽可达266 nm.通过低温光谱和寿命衰减曲线分析了材料的发光特性.利用Ga³⁺代替Ge⁴⁺可以实现对Cr³⁺和Cr⁴⁺发光的调控,大半径Ga³⁺的加入产生了新的格位,从而影响了整体的晶体场强度,获得了近红外一区发光更强烈的荧光粉.

关键词: 发光, 近红外, Mg₁₄Ge₅O₂₄:Cr, Ga³⁺

Abstract: Mg₁₄Ge₅O₂₄:Cr near-infrared(NIR)phosphors were synthesized by the high-temperature solid-phase method to achieve the coexistence of Cr³⁺ and Cr⁴⁺ valence luminescence. The crystalline phases of the samples were analyzed using XRD and GASA refinement software. The material has two luminescence centers, one from Cr³⁺ occupying the octahedral Ge⁴⁺ position with an emission band in the NIR I region and a half-peak width up to 256 nm, and the other from Cr⁴⁺ occupying the tetrahedral Ge⁴⁺ position with an emission band in the NIR II region and a half-peak width up to 266 nm. The luminescence properties of the material were analyzed by low-temperature spectra and lifetime decay curves. The modulation of Cr³⁺ and Cr⁴⁺ luminescence can be achieved by using Ga³⁺ instead of Ge⁴⁺. The addition of large radius Ga³⁺ ions generates new lattice sites, which affects the overall crystal field intensity, and a phosphor with more intense luminescence in the NIR I region is obtained.

Key words: luminescence, near infrared, Mg₁₄Ge₅O₂₄:Cr, Ga³⁺

中图分类号:

O782.31

徐艳梅,秦晓东,梁绍龙,王嘉瑞,王雪骄,王志军. Ga³⁺对Mg₁₄Ge₅O₂₄:Cr近红外发光材料的影响[J]. 河北大学学报(自然科学版), 2023, 43(5): 463-469.

XU Yanmei,QIN Xiaodong,LIANG Shaolong,WANG Jiarui,WANG Xuejiao,WANG Zhijun. Effect of Ga³⁺ on the luminescence property of Mg₁₄Ge₅O₂₄:Cr near infrared material[J]. Journal of Hebei University(Natural Science Edition), 2023, 43(5): 463-469.

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Ga³⁺对Mg₁₄Ge₅O₂₄:Cr近红外发光材料的影响

Effect of Ga³⁺ on the luminescence property of Mg₁₄Ge₅O₂₄:Cr near infrared material

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