[1] 刘丰珍, 朱美芳, 冯勇, 刘金龙, 汪六九, 韩一琴. 等离子体-热丝CVD技术制备多晶硅薄膜 [J]. 半导体学报 2003.doi:10.3321/j.issn:0253-4177.2003.05.011
[2] 曾祥斌, JOHNNY K O Sin, 徐重阳, 饶瑞, 刘世建. 多晶硅薄膜晶体管的表面氮钝化技术 [J]. 压电与声光 2001.doi:10.3969/j.issn.1004-2474.2001.02.016
[3] 曾祥斌, 徐重阳, 饶瑞, JOHNNY K O Sin. 多晶硅薄膜的表面处理工艺 [J]. 无机材料学报 2001.doi:10.3321/j.issn:1000-324X.2001.04.020
[4] 陈城钊, 方健文, 林璇英. a-Si∶H 薄膜固相晶化法制备多晶硅薄膜 [J]. 浙江师范大学学报(自然科学版) 2002.doi:10.3969/j.issn.1001-5051.2002.03.009
[5] 邱法斌, 骆文生, 张玉, 刘传珍, 荆海, 黄锡珉. 准分子激光烧结玻璃衬底上多晶硅薄膜材料的制备 [J]. 液晶与显示 2001.doi:10.3969/j.issn.1007-2780.2001.03.002
[6] 刘传珍, 杨柏梁, 袁剑峰, 李牧菊, 吴渊, 寥燕平, 张玉, 王大海, 黄锡珉, LIU Chuan-zhen, YANG Bai-liang, YUAN Jian-feng, LI Mu-ju, WU Yuan, LIAO Yan-ping, ZHANG Yu, WANG Da-hai, HUANG Xi-min. 金属诱导法低温多晶硅薄膜的制备与研究 [J]. 半导体学报 2001.doi:10.3321/j.issn:0253-4177.2001.01.011
[7] 金仲和, 王跃林. MILC超薄沟道多晶硅薄膜晶体管 [J]. 电子学报 2001.doi:10.3321/j.issn:0372-2112.2001.08.016
[8] 王文, 孟志国. 低温金属诱导横向晶化多晶硅材料和器件技术 [J]. 电子学报 2003.doi:10.3321/j.issn:0372-2112.2003.05.006
[9] 秦明, 黄庆安, Yuen C Y, Poon Vincent M C. 金属诱导非晶硅横向晶化形成的多晶硅的生长研究 [J]. 固体电子学研究与进展 2001.doi:10.3969/j.issn.1000-3819.2001.03.018
[10] 黄创君, 林璇英, 林揆训, 余楚迎, 姚若河. 低温制备高质量多晶硅薄膜技术及其应用 [J]. 功能材料 2001.doi:10.3321/j.issn:1001-9731.2001.06.001
[11] Serge Ecoffey, Didier Bouvet, Adrian M Ionescu. Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films [J]. Nanotechnology 2002, 3(3).
[12] Fortunato G.. POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CONTINUOUS EVOLVING TECHNOLOGY [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 1997, 1/2(1/2).
[13] M. Modreanu, N. Tomozeiu, Mariuca Gartner, P. Cosmin. Microstructural and optical properties of as-deposited LPCVD silicon films [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2001, 1/2(1/2).
[14] M. Modreanu, M. Bercu, C. Cobianu. Physical properties of polycrystalline silicon films related to LPCVD conditions [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2001, 1/2(1/2).
[15] Schropp REI., Stannowski B., Rath JK.. New challenges in thin film transistor (TFT) research [J]. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites 2002, Pt.2(Pt.2).
[16] Sunayama H., Yamada K., Karasawa M., Ishibashi K.. Preparation of poly-Si films by Cat-CVD for thin film transistor [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2003, 1/2(1/2).
[17] Rogel R., Mohammed-Brahim T., Bonnaud O., Kleider JP., Sarret M.. High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon [J]. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites 2000, Pt.A(Pt.A).
[18] Mohammed-Brahim T., Briand D., Sarret M., Bonnaud O., Kleider JP., Longeaud C., Lambert B., Kis-Sion K.. From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties [J]. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites 1998, Pt.B(Pt.B).
[19] SONG IN-HYUK, HAN MIN-KPP. Low temperature poly-Si TFTs for display application [J]. Current Applied Physics 2003, 3.
[20] Veneri PD., Imparato A., Minarini C., Privato C., Terzini E., Addonizio ML.. Application of Nd : YLF laser to amorphous silicon crystallization process [J]. Materials Science & Engineering, B. Solid-State Materials for Advanced Technology 2000, 0(0).
[21] PIHAN E, SLAOUI A, ROCAI CABARROCAS P. Polycrystalline silicon films by aluminium-induced crystallization: growth process vs. silicon deposition method [J]. Thin Solid Films 2004, 451-452.
[22] L. Pereira, H. Aguas, R.M.S. Martins, P. Vilarinho, E. Fortunato, R. Martins. Polycrystalline silicon obtained by metal induced crystallization using different metals [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2004, 3(3).
[23] Xinxin Li, Yitshak Zohar, Man Wong. Fabrication and characterization of nickel-induced laterally crystallized polycrystalline silicon piezo-resistive sensors [J]. Sensors and Actuators, A. Physical 2000, 1/3(1/3).
[24] Jin ZH., Yeung M., Kwok HS., Wong M., Bhat GA.. Nickel induced crystallization of amorphous silicon thin films [J]. Journal of Applied Physics 1998, 1(1).
[25] Jin Zhonghe, Kwok Hoi S., Wong Man, Moulding Keith. Effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films [J]. IEEE Transactions on Electron Devices 1999, 1(1). |
